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DF005M-DF10M
Vishay Lite-On Power Semiconductor
1.0A Glass Passivated Bridge Rectifier
Features
D Glass passivated die construction D Diffused junction D Low forward voltage drop, high
current capability
D Surge overload rating to 50A peak D Designed for printed circuit board applications D Plastic material - UL Recognition
flammability classification 94V-0
14 483
D This series is UL listed under recognized
component index, file number E95060
Absolute Maximum Ratings
Tj = 25_C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage =DC Bl ki voltage DC Blocking lt Test Conditions Type DF005M DF01M DF02M DF04M DF06M DF08M DF10M Symbol VRRM =VRWM =VR V Value 50 100 200 400 600 800 1000 50 1 -65...+150 Unit V V V V V V V A A C
Peak forward surge current Average forward current TA=40C Junction and storage temperature range
IFSM IFAV Tj=Tstg
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current I2t Rating for fusing Diode capacitance Thermal resistance junction to ambient Test Conditions IF=1A TA=25C TA=125C VR=4V, f=1MHz on PC board with 5mm2 Type Symbol Min Typ Max Unit VF 1.1 V IR 10 mA IR 500 mA I2t 10.4 A2s CD 25 pF RthJA 110 K/W
Rev. A2, 24-Jun-98
1 (5)
DF005M-DF10M
Vishay Lite-On Power Semiconductor Characteristics (Tj = 25_C unless otherwise specified)
IFSM - Peak Forward Surge Current ( A ) IFAV - Average Forward Current ( A ) 1.0
60 Hz resistive or inductive load
60 50 40 30 20 10 0 1
Single Half Sine-Wave (JEDEC Method)
0.5
0
15605
40
60
80
100
120
140
15607
10 Number of Cycles at 60 Hz
100
Tamb - Ambient Temperature ( C )
Figure 1. Max. Average Forward Current vs. Ambient Temperature
10
Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles
100 C D - Diode Capacitance ( pF )
Tj = 25C f = 1 MHz Vsig=50 mV p-p
IF - Forward Current ( A )
1.0
10
0.1
Tj = 25C IF Pulse Width = 300 s 2% Duty Cycle
0.01
15606
0.4
0.6
0.8
1.0
1.2
1.4
15608
1 1 10 VR - Reverse Voltage ( V ) 100
VF - Forward Voltage ( V )
Figure 2. Typ. Forward Current vs. Forward Voltage
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
2 (5)
Rev. A2, 24-Jun-98
DF005M-DF10M
Vishay Lite-On Power Semiconductor
100 IR - Reverse Current ( m A )
Tj = 125C
10
1.0
0.1
Tj = 25C
0.01 0
15609
20
40
60
80 100
120
140
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage
Rev. A2, 24-Jun-98
3 (5)
DF005M-DF10M
Vishay Lite-On Power Semiconductor Dimensions in mm
14466
Case: molded plastic Polarity: as marked on case Approx. weight: 0.38 grams Mounting position: any Marking: type number
4 (5)
Rev. A2, 24-Jun-98
DF005M-DF10M
Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Rev. A2, 24-Jun-98
5 (5)

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